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          REV:B Page 2 QW-A1066 0 15 10 20 1 10 100 5 25 30 C a p a c i t a n c e b e t w e e n t e r m i n a l s ( P F ) Reverse voltage (V) Fig.3 - Capacitance between t erminals characteristics f = 1 MHz Ta = 25 C 1u 10n 10u 100n 0 10 20 25 30 1m 100u 15 5 Reverse voltage (V) Fig. 2 - Reverse characteristics R e v e r s e c u r r e n t ( A ) 25 O C 75 O C 25 O C - 0.2 0.4 0 1 100 0.5 0 0.8 1000 0.6 0.3 0.1 0.7 10 F o r w a r d c u r r e n t ( m A ) Forward voltage (V) Fig. 1 - Forward characteristics RATING AND CHARACTERISTIC CURVES (CDBUR0230L) F o r w a r d v o l t a g e ( m V ) 430 400 440 420 450 410 AVG:421.28mV 25 O C Ta= IF=200mA n=30pcs Fig. 5 - VF Dispersion map R e v e r s e c u r r e n t ( u A ) 30 0 40 20 50 10 AVG:4.1816uA 5 15 25 35 45 Fig. 6 - IR Dispersion map C a p a c i t a n c e b e t w e e n t e r m i n a l s ( p F ) 26 20 28 24 30 22 AVG:22.8pF 21 23 25 27 29 Fig. 7 - CT Dispersion map 25 O C Ta= F=1MHz VR=0V n=10pcs 25 O C Ta= VR=10V n=30pcs 0 20 40 60 80 100 0 25 50 75 100 125 e ( O C) Ambient temperatur A v e r a g e f o r w a r d c u r r e n t ( % ) Fig.4 - Current derating curve O - 2 5 C O 2 5 C O 7 5 C O 1 2 5 C 150 Comchip Technology CO., LTD. SMD Schottky Barrier Diode |
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